Electrical and structural characterisation of single ZnO nanorods

Microelectronic Engineering

Volumn 85, Issue 5-6, 2008, Pages 1248-1252

  Weimann, Th ^a   Hinze, P ^a   Schlenker, E ^b   Bakin, A ^b   Mofor, A C ^b   Behrends, A ^b   Waag, A ^b  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

E beam lithography; EDX; Nanorods; TEM; ZnO

Indexed keywords

ELECTRIC PROPERTIES; ELECTROMIGRATION; ELECTRON BEAM LITHOGRAPHY; ENERGY DISPERSIVE SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

CONTACT MATERIALS; REFERENCE NANOWIRES;

NANORODS;

EID: 44149100531     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.01.032     Document Type: Article

References (17)

1. Bryllert T., Wernersson L.-E., Lowgren T., and Samuelson L. Nanotechnology 17 (2006) 227
2. Kim H.-J., Lee C.-H., Kim D.-W., and Yi G.-C. Nanotechnology 17 (2006) 227
3. Li C., Zhang D., Liu X., Han S., Tang T., Han J., and Zhou C. Appl. Phys. Lett. 82 (2003) 1613
4. Yao K., Zhang Z.Y., Liang X.L., Chen Q., Peng L.-M., and Yu Y. J. Phys. Chem. B 43 (2006) 21408
5. Katz O., Garber V., Meyler B., Bahir G., and Salzman J. Appl. Phys. Lett. 79 (2001) 1417
6. Calarco R., Marso M., Richter T., Aykanat A.I., Meijers R., Hart A.v.d., Stoica T., and Lüth H. Nano Lett. 5 (2005) 981
7. Law J.B.K., and Thong J.T.L. Appl. Phys. Lett. 88 (2006) 133114
8. Mofor A.C., Bakin A., Chejarla U., Schlenker E., El-Shaer A., Wagner G., Boukos N., Travlos A., and Waag A. Superlattices Microstruct. 42 (2007) 415
9. Yang H.S., Norton D.P., Pearton S.J., and Ren F. Appl. Phys. Lett. 87 (2005) 212106
10. Thoms S., Macintyre D.S., and McCarthy M. Microelectron. Eng. 41/42 (1998) 207-210
11. Cheng Y., Xiong P., Fields L., Zheng J.P., Yang R.S., and Wang Z.L. Appl. Phys. Lett. 89 (2004) 093114
12. Lao C.S., Liu J., Gao P., Zhang L., Davidovic D., Tummala R., and Wang Z.L. Nano Lett. 6 (2006) 63
13. Fan Z., Wang D., Chang P.-C., Tseng W.-Y., and Lu J.G. Appl. Phys. Lett. 85 (2004) 5923
14. II Park W., Kim J.S., Yi G.-C., Bae M.H., and Lee H.-J. Appl. Phys. Lett. 85 (2004) 5052
15. Goldberger J., Sirbuly D.J., Law M., and Yang P. J. Phys. Chem. B 109 (2005) 9
16. Chang P.-C., Fan Z., Chien C.-J., Stichtenoth D., Ronning C., and Lu J.G. Appl. Phys. Lett. 89 (2006) 133113
17. Weimann Th., Hinze P., Scherer H., and Niemeyer J. Microelectron. Eng. 46 S (1997) 165-168