Effect of swift heavy ion irradiation on structure, optical, and gas sensing properties of SnO2 thin films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 9, 2008, Pages 1987-1992

  Rani, Sanju ^a   Puri, N K ^b   Roy, Somnath C ^c   Bhatnagar, M C ^a   Kanjilal, D ^d  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b ITS Engineering College   (India)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

Band gap; Crystallization; Gas sensing; Ion irradiation; Oxygen interstitial; p type; Photoluminescence; SnO2 thin film

Indexed keywords

CHEMICAL SENSORS; CRYSTALLIZATION KINETICS; ENERGY GAP; HEAVY IONS; ION BOMBARDMENT; TIN DIOXIDE;

OXYGEN INTERSTITIALS; SWIFT HEAVY ION IRRADIATIONS; YELLOW LUMINESCENCE;

THIN FILMS;

EID: 43849103513     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.02.062     Document Type: Article

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