Comparative analysis of SOI and GOI MOSFETs

IEEE Transactions on Electron Devices

Volumn 53, Issue 10, 2006, Pages 2545-2550

  Beysserie, Sébastien ^a   Branlard, Julien ^b   Aboud, Shela ^c   Goodnick, Stephen M ^d   Saraniti, Marco ^e  

^a ADVANTEST CORPORATION   (Japan)

^b FERMI NATIONAL ACCELERATOR LABORATORY   (United States)

^c Worcester Polytechnic Institute   (United States)

^d Arizona State University   (United States)

^e Illinois Institute of Technology   (United States)

Author keywords

Frequency response; Germanium; Monte Carlo methods; MOSFETs; Silicon on insulator (SOI) technology

Indexed keywords

CELLULAR MONTE CARLO; CHANNEL CONDUCTANCES; COMPARATIVE ANALYSIS; DRIVE CURRENTS; EFFECTIVE GATE LENGTHS; FULL BANDS; GERMANIUM ON INSULATORS; I-V CHARACTERISTICS; MOSFETS; P TYPES; SILICON ON INSULATORS; SILICON-ON-INSULATOR (SOI) TECHNOLOGY; SIMULATION RESULTS; SOI-MOSFETS; STATIC AND DYNAMICS; UNITY-GAIN FREQUENCIES;

CURRENT VOLTAGE CHARACTERISTICS; CUTOFF FREQUENCY; GERMANIUM; IMPACT IONIZATION; MICROSENSORS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY;

MONTE CARLO METHODS;

EID: 43749124951     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.882272     Document Type: Article

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