Improvement of electro-physical properties of ultra-thin PECVD silicon oxynitride layers by high-temperature annealing

Vacuum

Volumn 82, Issue 10, 2008, Pages 1013-1019

  Mroczyński, Robert ^a,b   Kwietniewski, Norbert ^a   Ćwil, Michał ^c   Hoffmann, Patrick ^d   Beck, Romuald B ^a   Jakubowski, Andrzej ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^c TELE AND RADIO RESEARCH INSTITUTE   (Poland)

^d HAHN MEITNER INSTITUT   (Germany)

Author keywords

CMOS; PECVD; Silicon oxynitride; SIMS; Ultra thin dielectrics; XPS

Indexed keywords

ANNEALING; HIGH TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH TEMPERATURE ANNEALING; SILICON OXYNITRIDE LAYERS; ULTRA THIN DIELECTRICS;

SILICON COMPOUNDS;

EID: 43649104772     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2008.01.009     Document Type: Article

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