The influence of dilution of the reactive gases in argon on electro-physical properties of ultra-thin silicon oxynitride layers formed by PECVD

Vacuum

Volumn 81, Issue 5, 2007, Pages 695-699

  Mroczyński, Robert ^a   Beck, Romuald B ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

CMOS; Oxynitride; PECVD; Ultra thin dielectrics

Indexed keywords

COMPOSITION; DIELECTRIC MATERIALS; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS;

INTERFACE TRAPS DENSITY; OXYNITRIDE;

ULTRATHIN FILMS;

EID: 33845225485     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2006.09.002     Document Type: Article

References (8)

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