Quantitative depth profiling of SiO x N y layers on Si

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 414-417

  Van Berkum, J G M ^a   Hopstaken, M J P ^a   Snijders, J H M ^a   Tamminga, Y ^a   Cubaynes, F N ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Depth profiling; Gate dielectric; Matrix effects; Optical profilometry; Oxynitrides

Indexed keywords

DIELECTRIC FILMS; ELLIPSOMETRY; EROSION; INTERPOLATION; IONS; OPTICAL PROPERTIES; PROFILOMETRY; SECONDARY ION MASS SPECTROMETRY; ULTRATHIN FILMS;

DEPTH PROFILING;

SILICON COMPOUNDS;

EID: 12244272112     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00691-8     Document Type: Conference Paper

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