An analyticalmethod of evaluating variation of the threshold voltage shift caused by the negative-bias temperature stress in poly-Si TFT's

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 165-172

  Maeda, Shigenobu ^a   Maegawa, Shigeto ^a   Ipposhi, Takashi ^a   Kuriyama, Hirotada ^a   Ashida, Motoi ^a   Inoue, Yasuo ^a   Miyoshi, Hirokazu ^a   Yasuoka, Akihiko ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DEHYDROGENATION; INTERFACES (MATERIALS); SILICA; THERMAL STRESS;

THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 0031647690     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658826     Document Type: Article

References (18)

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