Super critical thickness SiGe-channel heterostructure p -type metal-oxide-semiconductor field-effect transistors using laser spike annealing

Journal of Applied Physics

Volumn 103, Issue 10, 2008, Pages

  Ní Chĺirigh, Cáit ^a,d   Wang, Xiaoru ^b   Rimple, Gana ^b   Wang, Yun ^b   David Theodore, N ^c   Canonico, Michael ^c   Hoyt, Judy L ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b Ultratech Stepper Inc   (United States)

^c FREESCALE SEMICONDUCTOR INC   (United States)

^d Pixtronix Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE MOBILITY; LEAKAGE CURRENTS; MOSFET DEVICES; SILICON ALLOYS;

LASER SPIKE ANNEALING; SUPER CRITICAL THICKNESS SIGE-CHANNEL;

HETEROJUNCTIONS;

EID: 44649125383     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2903849     Document Type: Article

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