Effect of pre-Co-deposition Ni ion implantation on the stress level of CoSi2 films on Si(1 0 0)

Journal of Crystal Growth

Volumn 270, Issue 1-2, 2004, Pages 15-20

  Ma, K ^a   Feng, J Y ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

A1. Crystal structure; A1. Stresses; A1. X ray diffraction; A3. Physical vapor deposition processes; B2. Semiconducting silicon compounds

Indexed keywords

CRYSTAL STRUCTURE ANALYSIS; LATTICE MISMATCH; SCHOTTKY BARRIER; SILICIDES;

COBALT COMPOUNDS; CRYSTAL LATTICES; ION IMPLANTATION; NICKEL; PHYSICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; RESIDUAL STRESSES; SUBSTRATES; X RAY DIFFRACTION;

SEMICONDUCTING SILICON;

EID: 4344637423     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.109     Document Type: Article

References (17)

1. Osburn C.M., Tsai J.Y., Sun J. J. Electron. Mater. 25:1996;1725.
2. Gambino J.P., Colgan E.G. Mater. Chem. Phys. 52:1998;99.
3. Kim G.B., Kwak J.S., Baik H.K. J. Appl. Phys. 82:1997;2323.
4. Van Ommen A.H., Bulle-Lieuwma C.W., Langereis C. J. Appl. Phys. 64:1988;2706.
5. Li B.B., Huang F., Zhang S.L., Gao Y., Zhang L. Semicond. Sci. Technol. 13:1998;634.
6. Phillips J.M., Batstone J.L., Hensel J.C., Cerullo M. Appl. Phys. Lett. 51:1987;1895.
7. Ruan L., Chen D.M. Appl. Phys. Lett. 72:1998;3464.
8. Tung R.T. Appl. Phys. Lett. 72:1998;2538.
9. Liu J.F., Feng J.Y., Li W.Z. Semicond. Sci. Technol. 16:2001;273.
10. Chamirian O., Steegen A., Bender H., Lauwer A., de Potter M., Marabelli F., Maex K. Microelectronic Eng. 60:2002;221.
11. Chamirian O., Lauwer A., Demeurisse C., Guérault H., Vantomme A., Maex K. Microelectronic Eng. 64:2002;173.
12. Rinderknecht J., Prinz H., Kammler T., Berberich F., Zschech E. Microelectronic Eng. 64:2002;143.
13. Guo S.S., Tsai C.J. J. Vac. Sci. Technol. B. 21:2003;628.
14. d'Heurle F.M., Petersson C.S., Stolt L., Stritzker B. J. Appl. Phys. 53:1982;5678.
15. Ito T., Azuma H., Noda S. Japan. J. Appl. Phys. 33:1994;5681.
16. Gúenin G., Ignet M., Thomas O. J. Appl. Phys. 68:1990;6515.
17. International Center for Diffraction Data, JCPDS (1988) 38-1449.