In situ high-temperature synchrotron-radiation diffraction studies of Ni and Co-Ni silicidation processes

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 143-149

  Rinderknecht, J ^a   Prinz, H ^a   Kammler, T ^a   Berberich, F ^b   Zschech, E ^a  

^a IBM MICROELECTRONICS   (United States)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Co Ni silicides; Impact of dopants substrate; Ni silicide; Phase formation transition temperatures

Indexed keywords

COBALT ALLOYS; CRYSTAL ORIENTATION; ELECTRIC RESISTANCE; NICKEL; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SYNCHROTRON RADIATION; X RAY DIFFRACTION;

SILICIDATION;

MOSFET DEVICES;

EID: 0036776401     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00778-5     Document Type: Conference Paper

References (9)

1. 2 formation by using Ni interposed layer on Si substrate
2. 2 nucleation: The effect of entropy of mixing
3. Comparative study of nickel silicide and cobalt silicide for sub 0.25-μm technologies
4. High performance sub-50 nm CMOS with advanced gate stack
5. ROBL - A CRG beamline for radiochemistry and materials research at the ESRF