Effect of pre-Co-deposition C+ implantation on the stress level of CoSi2 films formed on Si(100) substrates

Semiconductor Science and Technology

Volumn 16, Issue 4, 2001, Pages 273-275

  Liu, J F ^a   Feng, J Y ^a   Li, W Z ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; COMPOSITION EFFECTS; DEPOSITION; FILMS; ION IMPLANTATION; LATTICE CONSTANTS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; TENSILE STRESS;

COBALT SILICIDE; STRESS LEVEL;

COBALT COMPOUNDS;

EID: 0035307229     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/4/315     Document Type: Article

References (18)