CoSi2 formation from CoxNi1-x/Ti system

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 173-180

  Chamirian, O ^a,b   Lauwers, A ^a   Demeurisse, C ^a   Guerault H ^c   Vantomme, A ^c   Maex, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c KU LEUVEN   (Belgium)

Author keywords

CoxNi1 x silicide; Roughness; Sheet resistance; Ti cap

Indexed keywords

COBALT COMPOUNDS; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

SHEET RESISTANCE;

MOS DEVICES;

EID: 0036776708     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00782-7     Document Type: Conference Paper

References (11)

1. 2: Nucleation and diffusion mechanisms
2. Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies
3. 2 for 0.18 μm and below
4. Nucleation of a new phase from the interaction of two adjacent phases: Some silicides
5. Kinetics of formation of silicides: A review
6. 2
7. Reaction of silicon and films of Co-Ni alloys: Phase separation of the monosilicides and nucleation of the disilicides
8. 2
9. XPS and HRTEM characterization of cobalt-nickel silicide thin films
10. 2 formation from a Co-Ni alloy
11. 0.08/Si system