Noise in p-channel SiGe and Si MOSFETs with gate oxide grown by low temperature plasma anodisation

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 2001, Pages 181-186

  Lukyanchikova, N B ^a   Petrichuk, M V ^a   Garbar, N P ^a   Riley, L S ^a   Hall, S ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; GATES (TRANSISTOR); LOW TEMPERATURE OPERATIONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR PLASMAS; SPURIOUS SIGNAL NOISE;

GATE OXIDE; HOOGE LOW FREQUENCY NOISE; LOW TEMPERATURE PLASMA ANODISATION;

MOSFET DEVICES;

EID: 0035574662     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. X-ray photoelectron spectroscopy of SiGe: Implications for oxidation kinetics of SiGe
2. Noise evaluation of SiGe and Si nMOSFETs with gate oxide grown by low temperature plasma anodisation
3. SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation
4. On the flicker noise in submicron silicon MOSFETs
5. 1/f noise in MOS devices, mobility or number fluctuations?
6. 2 interface