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Volumn 64, Issue 12, 1988, Pages

Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0002694794     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.341981     Document Type: Article
Times cited : (452)

References (169)
  • 2
    • 84950873088 scopus 로고    scopus 로고
    • Since QWHs and SLs tend to confine phonons as well as electrons and holes, the purpose of these experiments, suggested by one of us (N.H.), was to search, in an initially undoped SL that required further doping, for phonon replicas involving an impurity (Zn) in radiative recombination. Hence, the Zn diffusion and the discovery of layer intermixing or disordering.
  • 7
    • 84950763297 scopus 로고
    • The first impurity implantation of [formula omitted] As-GaAs SLs for layer disordering was performed for N. Holonyak, Jr. in early 1981 by M. Feng (then at Hughes Research) based on a request to Feng by G. E. Stillman. See ,U.S. Patent 4,511,408, April 16, 1985 (Filed April 22,)
    • (1982)
    • Holonyak, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.