High oxygen-pressure annealing effects on the ferroelectric and structural properties of PbZr0.3Ti0.7O3 thin films

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2186-2191

  Escote, M T ^a   Pontes, F M ^a   Leite, E R ^a   Longo, E ^a   Jardim, R F ^b   Pizani, P S ^a  

^a FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EMBEDDED SYSTEMS; HYSTERESIS; LASER ABLATION; LEAD COMPOUNDS; POLARIZATION; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; STOICHIOMETRY; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY DIFFRACTION;

CRYSTALLINE PHASES; FERROELECTRICAL FILMS; HYSTRESIS LOOPS; OXYGEN-PRESSURE ANNEALING;

FERROELECTRIC MATERIALS;

EID: 4344610644     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767968     Document Type: Article

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