193 nm resist shrinkage carryover effect to a post-etch layer due to CD-SEM measurement

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 1, 2004, Pages 657-664

  Cao, Gary X ^a   Wheeler, Nancy J ^a   Wong, Alan ^a  

^a INTEL CORPORATION   (United States)

Author keywords

193 nm resist; Carryover effect; CD shrinkage; CD SEM; Etch; Lithography; Resist slimming; Shrinkage finger print

Indexed keywords

193 NM RESIST; CARRYOVER EFFECT; CD SHRINKAGE; CD-SEM; RESIST SLIMMING; SHRINKAGE FINGER-PRINT;

ETCHING; MATHEMATICAL MODELS; MEASUREMENT THEORY; OPTIMIZATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SYNTHESIS (CHEMICAL);

PHOTORESISTS;

EID: 4344603146     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.533881     Document Type: Conference Paper

References (11)

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