193nm metrology: Facing severe e-beam/resist interaction phenomena

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4344, Issue 1, 2001, Pages 653-661

  Vasconi, Mauro ^a   Bollin, Maddalena ^a   Cotti, Gina ^a   Pain, Laurent ^b   Tirard, Vincent ^a  

^a STMICROELECTRONICS   (Italy)

^b LETI CEA   (Italy)

Author keywords

193nm; CD process integration; CD variation; Resist; SEM

Indexed keywords

CHIP SCALE PACKAGES; ELECTRON BEAMS; ETCHING; OPTIMIZATION; SCANNING ELECTRON MICROSCOPY;

WAFER PRODUCTION;

PHOTORESISTS;

EID: 0034757252     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436791     Document Type: Article

References (2)

1. Study of 193nm resist behavior under SEM inspection: How to reduce linewidth shrinking effect?
2. Free volume loss with cross-linking reaction and deprotection by electron beam