193 nm photo-resist shrinkage after electron beam exposure

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4344, Issue 1, 2001, Pages 695-706

  Su, Bo ^a   Eytan, Guy ^a   Romano, Andrew ^b  

^a APPLIED MATERIALS INC   (United States)

^b CLARIANT CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBONIZATION; ELECTRON BEAMS; SCANNING ELECTRON MICROSCOPY; SHRINKAGE; SURFACE ROUGHNESS;

SIDEWALL IMAGING TECHNOLOGY;

PHOTORESISTS;

EID: 0034756476     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436796     Document Type: Article

References (6)

1. Mechanism studies of scanning electron microscope measurement effects on 193 nm photoresists and the development of improved line width measurement methods
2. Study of 193 nm resist behavior under SEM inspection: How to reduce line-width shrinkage effect?
3. Study on 193 nm photoresist shrinkage after electron beam exposure
4. Low shrinkage DUV resist
5. Characterization of electron beam stabilization of deep UV resist
6. Sidewall angle measurements using CD-SEM