Plasma diagnostics in pulsed plasma doping (P 2LAD) system

IEEE Transactions on Plasma Science

Volumn 32, Issue 2 I, 2004, Pages 456-462

  Koo, Bon Woong ^a,b   Fang, Ziwei ^b   Godet, Ludovic ^b   Radovanoc, Svetlana B ^b   Cardinaud, Christophe ^c   Cartry, Gilles ^c   Grouillet, André ^d   Lenoble, Damien ^d  

^a IEEE   (United States)

^b VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^c INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

^d STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT DELIVERY; ION ENERGY ANALYSIS; ION MASS ANALYSIS; PLASMA MEASUREMENTS; PULSE REPETITION RATES; PULSED PLASMA DOPING;

ARGON; BORON COMPOUNDS; ELECTRIC POTENTIAL; ELECTRON BEAMS; ION IMPLANTATION; PLASMA PROBES; PRESSURE EFFECTS; SEMICONDUCTOR DOPING; SILICON WAFERS;

PLASMA DIAGNOSTICS;

EID: 4344600584     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2004.828134     Document Type: Article

References (14)

1. International Technology Roadmap for Semiconductors, 2001.
2. J. O. Borland, T. Matsuda, and K. Sakamoto, "Shallow and abrupt junction formation: Paradigm shift at 65-70 nm," Solid State Technol., pp. 83-94, June 2002.
3. R. B. Liebert, S. R. Walther, S. B. Felch, Z. Fang, B. O. Pedersen, and D. Hacker, "Plasma doping system for 200 and 300 mm wafers," in Proc. 13th Int. Conf. Ion Implantation Technology, Alpbach, Austria, Sept. 2000, pp. 472-475.
4. S. B. Felch, D. Lenoble, A. Grouillet, E. Arevalo, S. R. Walther, Z. Fang, B.-W. Koo, and R. B. Liebert, "Comparison of ultra-shallow-junction with PLAD and beamline implantation," in Proc. 13th Int. Conf. Ion Implantation Technology, Alpbach, Austria, Sept. 2000.
5. D. Lenoble, F. Boeuf, and T. Skotnicki, "Fabrication of 60 nm plasma doped CMOS transistor," in Proc. 14th Int. Conf. Ion Implantation Technology, Taos, NM, Sept. 2002.
6. D. Lenoble, M. Goeckner, S. Felch, Z. Fang, J. Galvier, and A. Grouillet, "Evaluation of plasma doping for sub-0.18 μm devices," in Ion Implantation Technology - 98, J. Matsuo, G. Takaoka, and I. Yamada, Eds. Piscataway, NJ: IEEE, 1999, pp. 1222-1225.
7. T. Sheng, S. B. Felch, and C. B. Cooper, "Characteristics of a plasma doping system for semi-conductor device fabrication," J. Vac. Sci. Technol. B, vol. 12, no. 2, p. 969, 1994.
8. Y. Lei, "Study of pulsed plasma doping by Langmuir probe diagnostics," M.Sc. dissertation, Univ. Texas, Dallas, 2002.
9. N. Hershkowitz, Plasma Diagnostics, O. Auciello and D. L. Flamm, Eds. New York: Academic, 1989, vol. 113.
10. S. C. Brown, Basic Data of Plasma Physics (The Fundamental Data on Electrical Discharges in Gases). New York: Amer. Inst. Physics, 1994, vol. 1.
11. B. W. Koo, Z. Fang, and S. Felch, "Plasma characterization of a plasma doping system for semiconductor device fabrication," in Proc. IIT 2000, H. Ryssel, L. Frey, J. Gyulai, and H. Glawischnig, Eds: IEEE, 2000, pp. 504-507.
12. Y. Lei, "Study of pulsed plasma doping by Langmuir probe diagnostics," M.Sc. dissertation, Univ. Texas, Dallas, 2002.
13. W. D. Davis and T. A. Vanderslice, Phys. Rev., vol. 121, p. 219, 1963.
14. B. P. Linder, W. G. En, and N. W. Cheung, "Multiple species implants with pulsed and DC plasma immersion ion implantation," in Proc. 12th Int. Conf. Ion Implantation Technology, Kyoto, Japan, June 1998, pp. 1179-1182.