Silicon-based light emission after ion implantation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5357, Issue , 2004, Pages 164-171

  Kittler, M ^a   Arguirov, T ^b   Seifert, W ^a  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Defects; Electroluminescence; Gettering; Ion implantation; Light emission; Photoluminescence; Silicon

Indexed keywords

BAND-TO-BAND RADIATIONS; DISLOCATIONS; GETTERING; PHOSPHORUS IMPLANTATION;

BORON; CRYSTAL DEFECTS; ELECTROLUMINESCENCE; GETTERS; HEAT TREATMENT; ION IMPLANTATION; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SILICON; SUBSTRATES; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

LIGHT EMISSION;

EID: 4344588007     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.553871     Document Type: Conference Paper

References (22)

1. M. Zacharias, L.X. Yi, J. Heitmann, R. Scholz, M. Reiche, U. Goesele, Size-controlled Si nanocrystals for photonic and electronic applications, Solid State Phenomena 94, 95 (2003)
2. th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 95), Eds. H. Richter, M. Kittler, C. Claeys
3. th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 93), Eds. H.G. Grimmeiss, M. Kittler, H. Richter
4. th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 95), Eds. H. Richter, M. Kittler, C. Claeys
5. M. du Plessis, H. Aharoni, L.W. Snyman, Silicon LEDs fabricated in standard VLSI technology as components for all silicon monolithic integrated optoelectronic sytsems, IEEE J. of Selected Topics in Quantum Electronics 8, 1412 (2002)
6. W.L. Ng, M.A. Lourenco, R.M. Gwilliam, S. Ledain, G. Shao, K.P. Homewood, An efficient room temperature silicon-based light emitting diode, Nature 410, 192 (2001)
7. th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2003), Eds. H. Richter, M. Kittler
8. th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 93), Eds. H.G. Grimmeiss, M. Kittler, H. Richter
9. th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2003), Eds. H. Richter, M. Kittler
10. S. Coffa, Materials, devices and application of Si-based optoelectronics, ESSDERC September 2002, Florence/Italy
11. th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors (BIAMS 2000), Eds. H. Tomokage, T. Sekiguchi
12. V. Kveder, M. Kittler, W. Schroeter, Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior, Phys. Rev. B 63, 115208 (2001)
13. T. Arguirov, W. Seifert, M. Kittler, J. Reif, Temperature behavior of photoluminescence and electron-beam-induced current recombination behavior of extended defects in solar grade silicon, J. Phys.: Condens. Matter 14, 13169 (2002)
14. rd International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST'89), Ed. M. Kittle.
15. W. Shockley, W.T. Read, Statistics of the recombination of holes and electrons, Phys. Rev. 87, 835 (1952).
16. J. Dziewior, W. Schmid, Auger coefficients for highly doped and highly excited silicon, Appl. Phys. Lett. 31, 346 (1977)
17. H. Schlangenotto, H. Maeder, W. Gerlach, Temperature dependence of the radiative recombination coefficient in silicon, phys. stat. sol. (a) 21, 357 (1974)
18. T. Trupke, J. Zhao, A. Wang, R. Corkish, M. A. Green, Very efficient light emission from bulk crystalline silicon, Appl. Phys. Lett. 82, 2996 (2003)
19. th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2003), Eds. H. Richter, M. Kittler
20. M.A. Green, J. Zhao, A. Wang, P.J. Reece, M. Gal, Efficient silicon light-emitting diodes, Nature 412, 805 (2001)
21. M. Kittler, W. Seifert, On the origin of EBIC defect contrast in silicon: A reflection on injection and temperature dependent investigations, phys. stat. sol. (a) 138, 687 (1993)
22. C.A. Barrios, V.R. Almeida, R. Panepucci, M. Lipson, Electrooptic modulation of silicon-on-insulator submicrometer size waveguide devices, J. of Lightwave Technology 21, 2332 (2003)