Influence of point defects on defect formation in Si:Er

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 299-306

  Sobolev, N A ^a   Alexandrov, O V ^b   Emtsev, V V ^a   Makoviichuk, M I ^c   Merkulov, A V ^a   Parshin, E O ^c   Poloskin, D S ^a   Shek, E I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b Svetlana Semiconductor   (Russian Federation)

^c Institute of Microelectronics   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE;

DEFECT FORMATION; INTRINSIC POINT DEFECTS; OPTICALLY ACTIVE DEFECTS; OXYGEN ATOM; SI:ER STRUCTURES;

POINT DEFECTS;

EID: 17544382751     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

References (10)

1. Sobolev N.A.: Semicond., 1995, 29, N 7
2. Vyzhigjn Yu.V., Sobolev N.A., Gresserov B.N., Shek E.L: Sov.Phys.Semicond., 1992, 26, 1087
3. Sobolev N.A, Alexandrov O.V., Gresserov B.N., Gusinskii G.M., Naidenov V.O.,.Sheck E.I., Stepanov V.I, Vyzhigin Yu.V., Chepik L.F.,Troshina E.P.: Sol.St.Phenomena, 1993, 32-33, 83
4. Benton J.L., Michel J., Kimerling L.C., Jacobson D.C., Xie Y.-H., Eaglesham D.J., Fitzgerald E.A., Poate J.M.: J.Appl.Phys., 1991, 70, 2667
5. Emtsev V.V., Daluda Yu.N., Schmalz K.: Sol.St.Phenomena, 1991, 19-20, 229
6. Wagner P., Hage J.: Appl.Phys., 1989, A49, 123
7. Tang Y.S., Neasman K.C., Gillin W.P., Sealy B.J.: Appl.Phys.Lett, 1989, 55, 432
8. Michel J., Benton J.L., Ferrante R.F., Jacobson D.C., Eaglesham D.J., Fitzgerald E.A., Xie Y.-H., Poate J.M., Kimerling L.C.: J.Appl.Phys., 1991, 70, 2672
9. Adler D.L., Jacobson D.C., Eaglesham D.J., Marcus M.A., Benton J.L., Poate J.M., Citrin P.H.: Appl.Phys.Lett, 1992, 61, 2181
10. Sobolev N. A., Bressler M. S., Gusev O. B., Makoviichuk M. I., Parshin E. O., Shek E.I.: Semicond., 1994, 28, 1100