Luminescence of Silicon Implanted with Phosphorus

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 289-294

  Arguirov, T ^a   Kittler, M ^a,b   Seifert, W ^a,b   Bolze, D ^b   Ehwald, K E ^b   Formanek, P ^b   Reif, J ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

Author keywords

Crystal Defects; Phosphorus Implantation; Photoluminescence; Silicon

Indexed keywords

CRYSTAL DEFECTS; ION IMPLANTATION; NONDESTRUCTIVE EXAMINATION; PHOSPHORUS; QUENCHING; RAPID THERMAL ANNEALING; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

IMPLANTATION DOSE; IMPLANTATION STRUCTURES; INJECTION LEVEL;

PHOTOLUMINESCENCE;

EID: 1642516000     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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