RBS analysis of InGaN/GaN quantum wells for hybrid structures with efficient Förster coupling

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 8, 2008, Pages 1402-1406

  Barradas, N P ^a,b   Alves, E ^a,b   Pereira, S ^c   Watson, I M ^d  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c UNIVERSITY OF AVEIRO   (Portugal)

^d UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

GaN; InGaN; Multilayers; NDF; Rutherford backscattering

Indexed keywords

ENERGY TRANSFER; INDIUM COMPOUNDS; MULTILAYERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ENERGY DONOR AND ACCEPTOR; LUMINESCENT MATERIAL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 43049181321     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.12.052     Document Type: Article

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