Interface strain study of thin Lu2O3/Si using HRBS

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 8, 2008, Pages 1486-1489

  Chan, T K ^a   Darmawan, P ^b   Ho, C S ^a   Malar, P ^a   Lee, P S ^b   Osipowicz, T ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

61.85.+p; 68.49. h; 68.55.aj; Channeling; High resolution RBS; Interfacial strain; Lu2O3 thin films

Indexed keywords

ENERGY GAP; GATE DIELECTRICS; GATES (TRANSISTOR); INTERFACES (MATERIALS); STRAIN; THIN FILMS;

ANGULAR SCANS; INTERFACIAL STRAIN; RARE EARTH METAL OXIDES; SILICATE LAYER;

LUTETIUM COMPOUNDS;

EID: 43049162847     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.12.090     Document Type: Article

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