SIMS and high-resolution RBS analysis of ultrathin SiO x N y films

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 418-422

  Kimura, K ^a   Nakajima, K ^a   Kobayashi, H ^b   Miwa, S ^b   Satori, K ^b  

^a KYOTO UNIVERSITY   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

High resolution RBS; Matrix effect; RSF; Silicon oxinitride; SIMS

Indexed keywords

BACKSCATTERING; DIELECTRIC MATERIALS; SECONDARY ION MASS SPECTROMETRY; SILICON COMPOUNDS;

DEPTH PROFILES; MATRIX EFFECTS;

ULTRATHIN FILMS;

EID: 12244269688     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00692-X     Document Type: Conference Paper

References (5)

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2. D.F. Reich, B.W. Schueler, J. Bennett, in: P. Bertrand, H.-N. Migeon, H.W. Werner (Eds.), Proceedings of the 12th International Conference on Secondary Ion Mass Spectroscopy, Elsevier, Amsterdam, 2000, p. 557.
3. Novak S.W., Bekos E.J., Marino J.W. Appl. Surf. Sci. 175-176:2001;678.
4. Kimura K., Ohshima K., Mannami M. Appl. Phys. Lett. 64:1994;2232.
5. Kimura K., Nakajima K., Okazaki Y., Kobayashi H., Miwa S., Satori K. Jpn. J. Appl. Phys. 39:2000;4663.