Quantum mechanical modeling of MOSFET gate leakage for high-k gate dielectrics

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 1164-1169

  Wu, Huixian ^a,b  

^a Sandy)   (United States)

^b AGERE SYSTEMS   (United States)

Author keywords

Direct tunneling; Gate current; High k dielectrics; Quantum mechanical

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOSFET DEVICES; NANOTECHNOLOGY; PERMITTIVITY; SILICA;

DIELECTRIC CONSTANTS; DIRECT TUNNELING; GATE CURRENT; HIGH-K DIELECTRICS;

QUANTUM ELECTRONICS;

EID: 33745759305     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.036     Document Type: Article

References (12)

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