n-PS/a-Si:H heterojunction for device application

Journal of Non-Crystalline Solids

Volumn 354, Issue 19-25, 2008, Pages 2632-2636

  Prabakaran, R ^a   Aguas, H ^a   Fortunato, E ^a   Martins, R ^a   Ferreira, I ^a  

^a DEPARTAMENTO DE CIÊNCIA DOS MATERIAIS   (Portugal)

Author keywords

Amorphous semiconductors; Nanocrystals; Porosity; Raman scattering; Sensors

Indexed keywords

ATOMIC FORCE MICROSCOPY; NANOCRYSTALS; OXYGEN SENSORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROSITY; POROUS SILICON; RAMAN SCATTERING;

ABSORBANCE BANDS; ELECTRICAL RESPONSE; OXYGEN GAS SENSING PROPERTIES; PL EMISSION BAND;

AMORPHOUS SEMICONDUCTORS;

EID: 43049148311     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.09.115     Document Type: Article

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