Influence of the intrinsic layer characteristics on a-Si:H p-i-n solar cell performance analysed by means of a computer simulation

Solar Energy Materials and Solar Cells

Volumn 73, Issue 2, 2002, Pages 151-162

  Fantoni, Alessandro ^a,b   Viera, Manuela ^a   Martins, Rodrigo ^b  

^a INSTITUTO SUPERIOR DE ENGENHARIA DE LISBOA   (Portugal)

^b Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

Author keywords

A Si:H solar cells; Numerical simulation; Photo current optimization

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; CORRELATION METHODS; LIGHTING; PERFORMANCE; PHOTOCURRENTS; PHOTONS; SOLAR RADIATION;

RADIATION INTENSITY;

SILICON SOLAR CELLS;

EID: 0036605126     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(01)00120-9     Document Type: Article

References (15)

1. Terrestrial photovoltaic measurement procedures