-
1
-
-
0000776042
-
Macroscopic physics of the silicon inversion layer
-
M.G. Ancona H.F. Tiersten Macroscopic physics of the silicon inversion layer Phys. Rev. B 35 1987 7959
-
(1987)
Phys. Rev. B
, vol.35
, pp. 7959
-
-
Ancona, M.G.1
Tiersten, H.F.2
-
4
-
-
34447260047
-
An accelerated algorithm for 2D simulations of the quantum ballistic transport in nanoscale MOSFETs
-
N. Ben Abdallah M. Mouis C. Negulescu An accelerated algorithm for 2D simulations of the quantum ballistic transport in nanoscale MOSFETs J. Comput. Phys. 225 2007 74 99
-
(2007)
J. Comput. Phys.
, vol.225
, pp. 74-99
-
-
Ben Abdallah, N.1
Mouis, M.2
Negulescu, C.3
-
5
-
-
85190199807
-
-
B.A. Biegel, M.G. Ancona, C.S. Rafferty, Z. Yu, Efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices, NAS Technical Report NAS-04-008, 2004.
-
-
-
-
6
-
-
0033675028
-
Advanced numerical methods and software approaches for semiconductor device simulation
-
G.F. Carey A.L. Pardhanani S. Bova Advanced numerical methods and software approaches for semiconductor device simulation VLSI Des. 10 2000 391 414
-
(2000)
VLSI Des.
, vol.10
, pp. 391-414
-
-
Carey, G.F.1
Pardhanani, A.L.2
Bova, S.3
-
7
-
-
0042156813
-
An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices
-
R.-C. Chen J.-L. Liu An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices J. Comput. Phys. 189 2003 579 606
-
(2003)
J. Comput. Phys.
, vol.189
, pp. 579-606
-
-
Chen, R.-C.1
Liu, J.-L.2
-
8
-
-
0141638677
-
Monotone iterative methods for the adaptive finite element solution of semiconductor equations
-
R.-C. Chen J.-L. Liu Monotone iterative methods for the adaptive finite element solution of semiconductor equations J. Comput. Appl. Math. 159 2003 341 364
-
(2003)
J. Comput. Appl. Math.
, vol.159
, pp. 341-364
-
-
Chen, R.-C.1
Liu, J.-L.2
-
9
-
-
14544298353
-
A quantum corrected energy transport model for nanoscale semiconductor devices
-
R.-C. Chen J.-L. Liu A quantum corrected energy transport model for nanoscale semiconductor devices J. Comput. Phys. 204 2005 131 156
-
(2005)
J. Comput. Phys.
, vol.204
, pp. 131-156
-
-
Chen, R.-C.1
Liu, J.-L.2
-
10
-
-
0036538950
-
Macroscopic simulation of quantum mechanical effects in 2-D MOS devices via the density gradient method
-
D. Connelly Z. Yu D. Yergeau Macroscopic simulation of quantum mechanical effects in 2-D MOS devices via the density gradient method IEEE Trans. Electron Dev. 49 2002 619 626
-
(2002)
IEEE Trans. Electron Dev.
, vol.49
, pp. 619-626
-
-
Connelly, D.1
Yu, Z.2
Yergeau, D.3
-
11
-
-
15944400350
-
Quantum-corrected drift-diffusion models for transport in semiconductor devices
-
C. de Falco E. Gatti A.L. Lacaita R. Sacco Quantum-corrected drift-diffusion models for transport in semiconductor devices J. Comput. Phys. 204 2005 533 561
-
(2005)
J. Comput. Phys.
, vol.204
, pp. 533-561
-
-
de Falco, C.1
Gatti, E.2
Lacaita, A.L.3
Sacco, R.4
-
12
-
-
33846177213
-
An entropic quantum drift-diffusion model for electron transport in resonant tunneling diodes
-
P. Degond S. Gallego F. Méhats An entropic quantum drift-diffusion model for electron transport in resonant tunneling diodes J. Comput. Phys. 221 2007 226 249
-
(2007)
J. Comput. Phys.
, vol.221
, pp. 226-249
-
-
Degond, P.1
Gallego, S.2
Méhats, F.3
-
13
-
-
0037837827
-
Quantum moment hydrodynamics and the entropy principle
-
P. Degond C. Ringhofer Quantum moment hydrodynamics and the entropy principle J. Stat. Phys. 112 2003 587 628
-
(2003)
J. Stat. Phys.
, vol.112
, pp. 587-628
-
-
Degond, P.1
Ringhofer, C.2
-
14
-
-
33645770437
-
Semiconductor simulations using a coupled quantum drift-diffusion Schrödinger–Poisson model
-
A. Jüngel A. El Ayyadi Semiconductor simulations using a coupled quantum drift-diffusion Schrödinger–Poisson model SIAM J. Appl. Math. 66 2005 554 572
-
(2005)
SIAM J. Appl. Math.
, vol.66
, pp. 554-572
-
-
Jüngel, A.1
El Ayyadi, A.2
-
15
-
-
34247391829
-
A multi-purpose Schrödinger–Poisson solver for TCAD applications
-
M. Karner A. Gehring S. Holzer M. Pourfath M. Wagner W. Goes M. Vasicek O. Baumgartner C. Kernstock K. Schnass G. Zeiler T. Grasser H. Kosina S. Selberherr A multi-purpose Schrödinger–Poisson solver for TCAD applications J Comput. Electron 6 2007 179 182
-
(2007)
J Comput. Electron
, vol.6
, pp. 179-182
-
-
Karner, M.1
Gehring, A.2
Holzer, S.3
Pourfath, M.4
Wagner, M.5
Goes, W.6
Vasicek, M.7
Baumgartner, O.8
Kernstock, C.9
Schnass, K.10
Zeiler, G.11
Grasser, T.12
Kosina, H.13
Selberherr, S.14
-
16
-
-
0020180853
-
A singular perturbation approach for the analysis of the fundamental semiconductor equations
-
P.A. Markowich C.A. Ringhofer S. Selberherr M. Lentini A singular perturbation approach for the analysis of the fundamental semiconductor equations IEEE Trans. Electron Dev. ED-30 1983 1165 1180
-
(1983)
IEEE Trans. Electron Dev.
, vol.ED-30
, pp. 1165-1180
-
-
Markowich, P.A.1
Ringhofer, C.A.2
Selberherr, S.3
Lentini, M.4
-
18
-
-
2942579366
-
Multidimensional discretization of the stationary quantum drift-diffusion model for ultrasmall MOSFET structures
-
S. Odanaka Multidimensional discretization of the stationary quantum drift-diffusion model for ultrasmall MOSFET structures IEEE Trans. Comput.-Aided Des. Integr. Circ. Syst. 23 2004 837 842
-
(2004)
IEEE Trans. Comput.-Aided Des. Integr. Circ. Syst.
, vol.23
, pp. 837-842
-
-
Odanaka, S.1
-
19
-
-
0032391453
-
Accelerated monotone iterative methods for finite difference equations of reaction–diffusion
-
C.V. Pao Accelerated monotone iterative methods for finite difference equations of reaction–diffusion Numer. Math. 79 1998 261 281
-
(1998)
Numer. Math.
, vol.79
, pp. 261-281
-
-
Pao, C.V.1
-
20
-
-
0346777251
-
Accelerated monotone iterations for numerical solutions of nonlinear elliptic boundary value problems
-
C.V. Pao Accelerated monotone iterations for numerical solutions of nonlinear elliptic boundary value problems Comput. Math. Appl. 46 2003 1535 1544
-
(2003)
Comput. Math. Appl.
, vol.46
, pp. 1535-1544
-
-
Pao, C.V.1
-
21
-
-
0036436042
-
A review on the quantum drift diffusion model
-
R. Pinnau A review on the quantum drift diffusion model Transp. Theory Stat. Phys. 31 2002 367 395
-
(2002)
Transp. Theory Stat. Phys.
, vol.31
, pp. 367-395
-
-
Pinnau, R.1
-
22
-
-
0003033838
-
The stationary current–voltage characteristics of the quantum drift diffusion model
-
R. Pinnau A. Unterreiter The stationary current–voltage characteristics of the quantum drift diffusion model SIAM J. Numer. Anal. 37 1999 211 245
-
(1999)
SIAM J. Numer. Anal.
, vol.37
, pp. 211-245
-
-
Pinnau, R.1
Unterreiter, A.2
-
23
-
-
85190226541
-
-
C.S. Rafferty, B. Biegel, Z. Yu, M.G. Ancona, J. Bude, R.W. Dutton, Multi-dimensional quantum effect simulation using a density-gradient model and script-level programming techniques, in: Proc. SISPAD, 1998, pp. 137–140.
-
-
-
-
24
-
-
0346725184
-
An approximate Newton method for the solution of the basic semiconductor device equations
-
C. Ringhofer C. Schmeiser An approximate Newton method for the solution of the basic semiconductor device equations SIAM J. Numer. Anal. 26 1989 507 516
-
(1989)
SIAM J. Numer. Anal.
, vol.26
, pp. 507-516
-
-
Ringhofer, C.1
Schmeiser, C.2
-
25
-
-
22244484728
-
Where do the dopants go?
-
S. Roy A. Asenov Where do the dopants go? Science 309 2005 388 390
-
(2005)
Science
, vol.309
, pp. 388-390
-
-
Roy, S.1
Asenov, A.2
-
26
-
-
13344275832
-
Narrow-width SOI devices: the role of quantum–mechanical size quantization effect and unintentional doping on the device operation
-
D. Vasileska S.S. Ahmed Narrow-width SOI devices: the role of quantum–mechanical size quantization effect and unintentional doping on the device operation IEEE Trans. Electron Dev. 52 2005 227 236
-
(2005)
IEEE Trans. Electron Dev.
, vol.52
, pp. 227-236
-
-
Vasileska, D.1
Ahmed, S.S.2
-
27
-
-
18144427530
-
On accelerated monotone iterations for numerical solutions of semilinear elliptic boundary value problems
-
Y.-M. Wang On accelerated monotone iterations for numerical solutions of semilinear elliptic boundary value problems Appl. Math. Lett. 18 2005 749 755
-
(2005)
Appl. Math. Lett.
, vol.18
, pp. 749-755
-
-
Wang, Y.-M.1
-
28
-
-
0035249575
-
Quantum device-simulation with the density-gradient model on unstructured grids
-
A. Wettstein A. Schenk W. Fichtner Quantum device-simulation with the density-gradient model on unstructured grids IEEE Trans. Electron Dev. 48 2001 279 284
-
(2001)
IEEE Trans. Electron Dev.
, vol.48
, pp. 279-284
-
-
Wettstein, A.1
Schenk, A.2
Fichtner, W.3
|