Extraction of Schottky diode parameters from current-voltage data for a chemical-vapor-deposited diamond/silicon structure over a wide temperature range

Journal of Applied Physics

Volumn 103, Issue 8, 2008, Pages

  Rodrigues, A M ^a  

^a UNIVERSITY OF ALGARVE   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; PARAMETER ESTIMATION; SILICON;

SERIES RESISTANCE; THERMIONIC EMISSION THEORY;

SCHOTTKY BARRIER DIODES;

EID: 43049123812     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2908858     Document Type: Article

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