Series resistance calculation for Ag contacts on single crystal layered p-SnS and p-SnSe compound semiconductors in the wide temperature range

Microelectronic Engineering

Volumn 81, Issue 1, 2005, Pages 125-131

  Karadeniz, S ^a   Tugluoglu N ^a   Sahin M ^b   Safak H ^b  

^a Ankara Nuclear Research and Training Center   (Turkey)

^b SELCUK UNIVERSITY   (Turkey)

Author keywords

I V T; Schottky barrier; Series resistance; SnS; SnSe

Indexed keywords

CRYSTALLOGRAPHY; ENERGY CONVERSION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING TIN COMPOUNDS; SINGLE CRYSTALS; THERMIONIC EMISSION;

I-V-T; SCHOTTKY BARRIERS; SERIES RESISTANCE; SNS; SNSE;

SILVER;

EID: 21644473286     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.006     Document Type: Article

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