Stability of amorphous-silicon and nanocrystalline silicon thin-film transistors under DC and AC stress

IEEE Electron Device Letters

Volumn 28, Issue 9, 2007, Pages 803-805

  Hatzopoulos, A T ^a   Arpatzanis, N ^a   Tassis, D H ^a   Dimitriadis, C A ^a   Templier, F ^b   Oudwan, M ^b   Kamarinos, G ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b CEA LETI   (France)

^c MINATEC   (France)

Author keywords

Amorphous silicon (a Si); Nanocrystalline silicon (nc Si); Stability; Thin film transistors (TFTs)

Indexed keywords

A-SI:H; AC STRESS; AMORPHOUS-SILICON (A-SI); BI LAYERS; BIAS STRESS; CHANNEL MATERIALS; DEVICE PERFORMANCE; LOW TEMPERATURES; N CHANNELS; NANOCRYSTALLINE SILICON (NC-SI:H); NC-SI:H; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITIONS; SINGLE LAYERS; STATIC AND DYNAMICS; THIN-FILM TRANSISTORS (TFTS);

NANOCRYSTALLINE MATERIALS; NANOCRYSTALLINE SILICON; NONMETALS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ORGANIC COMPOUNDS; STABILITY; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

AMORPHOUS SILICON;

EID: 43049087256     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.902619     Document Type: Article

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