High-temperature Hall effect in Ga1-xMnxAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 15, 2004, Pages

  Ruzmetov, D ^a   Scherschligt, J ^a   Baxter, David V ^a   Wojtowicz, T ^b,c   Liu, X ^b   Sasaki, Y ^b   Furdyna, J K ^b   Yu, K M ^d   Walukiewicz, W ^d  

^a INDIANA UNIVERSITY   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

^c INSTITUTE OF PHYSICS   (Poland)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM; MANGANESE DERIVATIVE;

ARTICLE; CALCULATION; HIGH TEMPERATURE; LOW TEMPERATURE; MAGNETISM; MATERIALS; TEMPERATURE DEPENDENCE; THEORETICAL MODEL;

EID: 42749104157     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.155207     Document Type: Article

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