Deposition of high crystallinity poly-Si films on glass substrate and fabrication of high mobility bottom-gate TFT

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 173-177

  Lee, J W ^a   Shimizu, K ^a   Hanna, J ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; FILM GROWTH; GATES (TRANSISTOR); GLASS; METALLIC FILMS; OXIDATION; SILICON WAFERS; THIN FILM TRANSISTORS; VOLUME FRACTION;

DEFECT DENSITY; GAS FLOW RATIOS; GLASS SUBSTRATES; REACTIVE THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD);

POLYSILANES;

EID: 2942588811     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.047     Document Type: Conference Paper

References (11)

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