Low temperature fabrication of thin film transistors using microcrystalline Si deposited by cathode-type RF glow discharge

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 11, 1996, Pages 5687-5688

  Jayatissa, Ahalapitiya Hewage ^a   Hatanaka, Yoshinori ^a   Nakanishi, Yoichiro ^a   Yamaguchi, Tomuo ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Glow discharge; Microcrystalline silicon; TFT

Indexed keywords

LOW TEMPERATURE FABRICATION; MICROCRYSTALLINE SILICON;

AMORPHOUS SILICON; CATHODES; ELECTRODES; FABRICATION; GLOW DISCHARGES; ION BOMBARDMENT; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES;

THIN FILM TRANSISTORS;

EID: 0030285631     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5687     Document Type: Article

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