Development of Cat-CVD apparatus - A method to control wafer temperatures under thermal influence of heated catalyzer

Thin Solid Films

Volumn 395, Issue 1-2, 2001, Pages 71-74

  Karasawa, Minoru ^a,b   Masuda, Atsushi ^a   Ishibashi, Keiji ^b   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b Canon ANELVA Technix Corporation   (Japan)

Author keywords

Catalytic chemical vapor deposition; Electrostatic chuck; Gallium arsenide wafer; Heat control; Silicon wafer

Indexed keywords

CATALYST ACTIVITY; CHEMICAL VAPOR DEPOSITION; CHUCKS; ELECTROSTATICS; TEMPERATURE CONTROL;

ELECTROSTATIC CHUCKS (ESC); HEAT CATALYZERS;

SILICON WAFERS;

EID: 0035801173     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01210-X     Document Type: Conference Paper

References (4)