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Volumn 389-393, Issue , 2002, Pages 1419-1422

The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures

(12) Uneus L a Nakagomi, S b Linnarsson, M c Janson, M S c Svensson, B G c Yakimova, R a Syvajarvi M a Henry, A a Janzen E a Ekedahl, L G a Lundstrom I a Lloyd Spetz, A a

a LINKÖPING UNIVERSITY (Sweden)

b ISHINOMAKI SENSHU UNIVERSITY (Japan)

c ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

Annealing; Gas sensors; High temperature; Hydrogen diffusion; Schottky diodes

Indexed keywords

ANNEALING; ATOMS; CAPACITANCE; CHEMICAL SENSORS; DIFFUSION; HYDROGEN; SCHOTTKY BARRIER DIODES; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTING SILICON COMPOUNDS;

CAPACITANCE VOLTAGE CHARACTERISTIC; CATALYTIC METAL GATES; HIGH TEMPERATURE; HYDROGEN DIFFUSION; OXYGEN CONTAINING ATMOSPHERE; SCHOTTKY DIODES; SIC/SIO2-INTERFACES; SURFACE RESISTIVITY; DEFECT DENSITY;

SILICON CARBIDE; SCHOTTKY BARRIER DIODES;

EID: 0036436548 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.389-393.1419 Document Type: Conference Paper

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.