10 W/mm and high PAE field-plated AlGaN/GaN HEMTs at Ka-band with n+GaN source contact ledge

65th DRC Device Research Conference

Volumn , Issue , 2007, Pages 33-34

  Moon, J S ^a   Hashimoto, P ^a   Wong, D ^a   Hu, M ^a   Antcliffe, M ^a   McGuire, C ^a   Micovic, M ^a   Willadsen, P ^a   Chow, D ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36949025804     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2007.4373638     Document Type: Conference Paper

References (4)

1. M. A. Khan et al., Appl. Phys. Lett., Vol. 63, pp 1214-1415, 1993.
2. M. Micovic et al., IEDM Tech Digest, 2006
3. J.S. Moon et al., EEE Electron Device Lett., Vol. 26, pp 348-350, 2005.
4. T. Palacios et al., IEEE Electron Device Lett., Vol. 26, pp 781-783, 2005.