Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC

Thin Solid Films

Volumn 324, Issue 1-2, 1998, Pages 107-114

  Perry, William G ^a,b   Bremser, M B ^a   Zheleva, T ^a   Linthicum, K J ^a   Davis, R F ^a  

^a North Carolina State University   (United States)

^b NORTEL NETWORKS   (United States)

Author keywords

High resolution X ray diffraction; In plane components; Reciprocal lattice vector

Indexed keywords

DISLOCATIONS (CRYSTALS); LATTICE CONSTANTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

RECIPROCAL LATTICE VECTOR;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032123841     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)01217-0     Document Type: Article

References (24)

1. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, Jpn. J. Appl. Phys. 34 (1995) L797.
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, Appl. Phys. Lett. 68 (1996) 2105.
3. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, Jpn. J. Appl. Phys. 35 (1996) L74.
4. T.W. Weeks, M.D. Bremser, K.S. Ailey, E. Carlson, W.G. Perry, R.F. Davis, Appl. Phys. Lett. 67 (1995) 401.
5. W.G. Perry, M.B. Bremser, T. Zheleva, R.F. Davis, W. Shan, J.J. Song, J. Electron. Mater. 26 (1997) 224.
6. J.W. Matthews, A.E. Blakeslee, J. Cryst. Growth 27 (1974) 118.
7. C.M. Balkas, C. Basceri, R.F. Davis, Powder Diffraction 10 (1995) 266.
8. C. Kisielowski, J. Krüger, S. Rumimov, T. Suski, J.W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, E.R. Weber, M.D. Bremser, R.F. Davis, Phys. Rev. B 54 (1996) 17745.
9. A. Polian, M. Grimsdich, I. Grzegory, J. Appl. Phys. 79 (1996) 3343.
10. M.E. Sherwin, T.J. Drummond, J. Appl. Phys. 69 (1991) 8423.
11. J. Birch, J.E. Sundgren, P.F. Fewster, B. Hjorvarsson, J. Appl. Phys., 1995.
12. M.S. Goorsky, A.Y. Polyakov, M. Skowronski, M. Shin, D.W. Greve, Mater. Res. Soc. Symp. Proc. 449 (1997) 489.
13. T.W. Weeks, M.D. Bremser, K.S. Ailey, E. Carlson, W.G. Perry, E.L. Finer, N.A. El-Masry, R.F. Davis, J. Mater. Res. 11 (1996) 1011.
14. M.D. Bremser, W.G. Perry, T. Zheleva, N.V. Edwards, O.H. Nam, N. Parikh, D.E. Aspnes, R.F. Davis, MRS Internet J. Nitride Semicond. Res. 1 (1996) 9.
15. P.F. Fewster, N.L. Andrew, J. Appl. Phys. 74 (1993) 3121.
16. P.F. Fewster, N.L. Andrew, J. Appl. Cryst. 28 (1995) 451.
17. B. Heying, X.H. Wu, S. Keller, Y. Li, D. Kapolnek, B.P. Keller, S.P. DenBaars, J.S. Speck, Appl. Phys. Lett. 68 (1996) 643.
18. E.F. Schubert, Doping in III-V Semiconductors, Cambridge Univ. Press, New York, 1993.
19. S. Fischer, C. Wetzel, E.E. Haller, B.K. Meyer, Appl. Phys. Lett. 67 (1995) 1298.
20. R. Niebuhr, K. Bachem, K. Dombrowski, M. Maier, W. Pletschen, U. Kaufmann, J. Electron. Mater. 24 (1995) 1531.
21. A. Ishibashi, H. Takeishi, M. Mannoh, Y. Yabuuchi, Y. Ban, J. Electron. Mater. 25 (1996) 779.
22. P. Boguslawski, E.L. Briggs, J. Bernholc, Appl. Phys. Lett. 69 (1996) 233.
23. X.J. Ning, F.R. Cein, P. Pirouz, J.W Yang, M.A. Khan, Mater. Res. 11 (1996) 580.
24. O. Gfrörer, T. Schlusener, V. Harle, F. Scholz, A. Hangleiter, Mater. Res. Soc. Symp. Proc. 449 (1997) 429.