Novel InGaP/AlGaAs/InGaAs heterojunction FET for X-Ku band power applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1997, Pages 1191-1194

  Okamoto, Y ^a   Matsunaga, K ^a   Kuzuhara, M ^a   Kanamori, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; ELECTRIC POWER MEASUREMENT; ETCHING; HETEROJUNCTIONS; INTERMODULATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SIGNAL DISTORTION;

HETEROJUNCTION FIELD EFFECT TRANSISTORS (HJFET); HIGHLY SELECTIVE WET RECESS ETCHING TECHNIQUE; INTERMODULATION DISTORTION RATIO;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0030679377     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)