Novel design and fabrication of magnetic random access memory based on nano-ring-type magnetic tunnel junctions

Journal of Materials Science and Technology

Volumn 23, Issue 3, 2007, Pages 304-306

  Han, X F ^a   Wei, H X ^a   Peng, Z L ^a   Yang, H D ^a   Feng, J F ^a   Du, G X ^a   Sun, Z B ^a   Jiang, L X ^a   Qin, Q H ^a   Ma, M ^a   Wang, Y ^a   Wen, Z C ^a   Liu, D P ^a   Zhan, W S ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

MRAM; Nano ring type magnetic tunnel junctions; NR MTJ; Spin polarization; Spin transfer effect

Indexed keywords

DEPOSITION; ELECTRON BEAM LITHOGRAPHY; ETCHING; MAGNETIZATION; MAGNETORESISTANCE; MAGNETRON SPUTTERING; PHOTOLITHOGRAPHY; RANDOM ACCESS STORAGE; SPIN POLARIZATION;

MAGNETIC RANDOM ACCESS MEMORY (MRAM); NANORING TYPE MAGNETIC TUNNEL JUNCTIONS (NR-MTJ); OPTICAL LITHOGRAPHY; SPIN TRANSFER EFFECT;

TUNNEL JUNCTIONS;

EID: 34347245926     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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