Nickel oxide-induced crystallization of silicon for use in thin film transistors with a Si Nx diffusion filter

Applied Physics Letters

Volumn 92, Issue 14, 2008, Pages

  Kim, Jong Yeon ^a   Han, Jin Woo ^a   Han, Jeong Min ^a   Kim, Young Hwan ^a   Oh, Byeong Yun ^a   Kim, Byoung Yong ^a   Lee, Sang Keuk ^a   Seo, Dae Shik ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DIFFUSION; IMPURITIES; NICKEL OXIDE; PASSIVATION; THIN FILM TRANSISTORS;

CONSTANT AREA DENSITY; DIFFUSION FILTERS; FIELD-EFFECTIVE MOBILITY; GATE VOLTAGE;

SILICON;

EID: 42149176666     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2908036     Document Type: Article

References (17)

1. K. Nakazawa, J. Appl. Phys. 69, 1703 (1991).
2. T. J. King and K. C. Saraswat, IEEE Electron Device Lett. 13, 309 (1992).
3. H. Kuriyama, S. Kiyama, S. Noguchi, T. Kuahara, S. Ishida, T. Nohda, K. Sano, H. Iwata, S. Tsuda, and S. Nakano, Tech. Dig.-Int. Electron Devices Meet. 91, 563 (1991).
4. H. Kumomi, Appl. Phys. Lett. 83, 434 (2003).
5. P. C. van der Wilt, B. D. van Dijk, G. J. Bertens, R. Ishihara, and C. I. M. Beenakker, Appl. Phys. Lett. 79, 1819 (2001).
6. Z. Jin, G. A. Bhat, M. Yeung, H. S. Kwok, and M. Wong, J. Appl. Phys. 84, 194 (1998).
7. E. A. Guliants and W. A. Anderson, J. Appl. Phys. 89, 4648 (2001).
8. R. S. Sposili and J. S. Im, Appl. Phys. Lett. 69, 2864 (1996).
9. J. H. Ahn and B. T. Ahn, J. Electrochem. Soc. 148, H115 (2001).
10. Y.-C. Wu, T.-C. Chang, P.-T. Liu, Y.-C. Wu, C.-W. Chou, C.-H. Tu, J.-C. Lou, and C.-Y. Chang, Appl. Phys. Lett. 87, 143504 (2005).
11. M.-S. Kim, N.-K. Song, S.-H. Han, S.-K. Joo, and J.-S. Lee, Appl. Phys. Lett. 89, 233503 (2006).
12. W. S. Sohn, J. H. Choi, K. H. Kim, J. H. Oh, S. S. Kim, and J. Jang, J. Appl. Phys. 94, 4326 (2003).
13. J.-H. Choi, S.-S. Kim, J.-H. Cheon, S.-J. Park, Y.-D. Son, and J. Jang, J. Electrochem. Soc. 151, G448 (2004).
14. K. H. Kim, S. J. Park, A. Y. Kim, and J. Jang, J. Non-Cryst. Solids 299, 83 (2002).
15. K. R. Olasupo and M. K. Hatalis, IEEE Trans. Electron Devices 43, 1218 (1996).
16. S. K. Kim, J. H. Oh, J. H. cheon, and J. Jang, J. Korean Phys. Soc. 48, 1526 (2006).
17. S. Martin, C.-S. Chiang, J.-Y. Nahm, T. Li, J. Kanicki, and Y. Ugai, Jpn. J. Appl. Phys., Part 1 40, 530 (2001).