Properties of homoepitaxial ZnO and ZnO:P thin films grown by pulsed-laser deposition

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6895, Issue , 2008, Pages

  Von Wenckstern, H ^a   Brandt, M ^a   Schmidt, H ^a,b   Benndorf, G ^a   Zippel, J ^a   Hochmuth, H ^a   Lorenz, M ^a   Grundmann, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Hall effect; Homoepitaxy; Phosphorus doping; Pulsed laser deposition; ZnO thin films

Indexed keywords

COATINGS; ELECTRONIC PROPERTIES; LASERS; OXIDE FILMS; OXIDES; PHOSPHORUS; PIGMENTS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SOLIDS; THICK FILMS; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

(PL) PROPERTIES; ATOMIC SURFACES; CRYSTALLINE QUALITY; DOPING CONCENTRATIONS; HOMOEPITAXIAL; OXIDE MATERIALS; PERFECT LATTICE MATCH; PHOSPHOROUS DOPING; PULSED LASER DEPOSITION (PLD); UNIT-CELL VOLUME;

FILMS;

EID: 42149144586     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.768614     Document Type: Conference Paper

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