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Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 367-371

Fabrication of homoepitaxial ZnO films by low-temperature liquid-phase epitaxy

(7) Ehrentraut, Dirk a Sato, Hideto b Miyamoto, Miyuki c Fukuda, Tsuguo a Nikl, Martin d Maeda, Katsumi e Niikura, Ikuo e

a TOHOKU UNIVERSITY (Japan)

b MURATA MANUFACTURING CO LTD (Japan)

c MITSUBISHI GAS CHEMICAL COMPANY INC (Japan)

d INSTITUTE OF PHYSICS (Czech Republic)

e Tokyo Denpa Co Ltd (Japan)

Author keywords

A3. Liquid phase epitaxy; B1. Oxides; B1. Zinc compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; LIQUID PHASE EPITAXY; MACHINING; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; THIN FILMS;

LOW TEMPERATURE LIQUID PHASE EPITAXY; MISORIENTATION; PHOTOLUMINESCENCE SPECTRA; SHARP SPLITTING;

ZINC OXIDE;

EID: 30444447229 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.11.046 Document Type: Conference Paper

Times cited : (47)

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