Resonant-tunneling electron emitter in an AlN/GaN system

Applied Physics Letters

Volumn 86, Issue 18, 2005, Pages 1-3

  Ishida, A ^a   Inoue, Y ^a   Fujiyasu, H ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON EMISSION; ELECTRONS; GALLIUM COMPOUNDS; HETEROJUNCTIONS; PHOTONS; POLARIZATION;

CESIATED SURFACE; ELECTRON AFFINITY; ELECTRON EMITTERS; SUBBANDS;

RESONANT TUNNELING;

EID: 20844434481     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1922081     Document Type: Article

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