Fabrication and characterization of short period AlN/GaN quantum cascade laser structures

Journal of Crystal Growth

Volumn 265, Issue 1-2, 2004, Pages 65-70

  Inoue, Y ^a   Nagasawa, H ^a   Sone, N ^a   Ishino, K ^a   Ishida, A ^a   Fujiyasu, H ^a   Kim, J J ^b   Makino, H ^b   Yao, T ^b   Sakakibara, S ^c   Kuwabara, M ^d  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c YAMAHA CORPORATION   (Japan)

^d CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

A1. Intersubband transition; A1. Superlattice; B1. GaN; B3. Quantum cascade laser

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIFFUSION; ELECTRONS; EPITAXIAL GROWTH; INFRARED RADIATION; LASER BEAMS; POLARIZATION; QUANTUM THEORY; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GAN; INTERSUBBAND TRANSITION; QUANTUM CASCADE LASER;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 12144286957     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.01.044     Document Type: Article

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