High-f max GaN HEMT with high breakdown voltage over 100 v for millimeter-wave applications

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 6, 2007, Pages 2054-2058

  Makiyama, Kozo ^a   Ohki, Toshihiro ^a   Kanamura, Masahito ^a   Imanishi, Kenji ^a   Hara, Naoki ^a   Kikkawa, Toshihide ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAXIMUM FREQUENCY; MILLIMETERWAVE AMPLIFIERS;

ELECTRIC BREAKDOWN; GAIN MEASUREMENT; GALLIUM NITRIDE; MILLIMETER WAVES; POWER AMPLIFIERS; SCHOTTKY BARRIER DIODES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34547187720     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200674881     Document Type: Conference Paper

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