First-principles determination of the (510)\ symmetric tilt boundary structure in silicon and germanium

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 17, 1998, Pages 11241-11245

  Morris, J ^a   Lu, Z ^a   Ring, D ^a   Xiang, J ^a   Ho, K ^a   Wang, C ^a   Fu, Chong Long ^b  

^a IOWA STATE UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000865891     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.11241     Document Type: Article

References (28)

1. J. R. Hornstra, Physica (Utrecht)25, 409 (1959).
2. C. R. M. Grovenor, J. Phys. C 18, 4079 (1985).
3. T. A. Arias and J. D. Joannopoulos, Phys. Rev. B 49, 4525 (1994).
4. A. Maiti, M. F. Chisholm, S. J. Pennycook, and S. T. Pantelides, Phys. Rev. Lett. 77, 1306 (1996).
5. J. J. Bacmann, A. M. Papon, M. Petit, and G. Silvestre, Philos. Mag. A 51, 697 (1985).
6. A. Bourret and J. L. Rouviere, in Polycrystalline Semiconductors, Vol. 35 of Springer Proceedings in Physics, edited by J. H. Werner, H. J. Möller, and H. P. Strunk (Springer-Verlag, Berlin, 1989), p. 8.
7. J. L. Rouviere and A. Bourret, in Polycrystalline Semiconductors (Ref. 6), p. 19.
8. J. L. Rouviere and A. Bourret, J. Phys. (Paris), Colloq. 51, C1-329 (1990).
9. M. F. Chisholm and S. J. Pennycook, MRS Bull. 22, 53 (1997).
10. M. Kohyama, Phys. Status Solidi B 141, 71 (1987).
11. A. T. Paxton and A. P. Sutton, J. Phys. C 21, L481 (1988).
12. A. A. Levi, D. A. Smith, and J. T. Wetzel, J. Appl. Phys. 69, 2048 (1991).
13. A. P. Sutton and V. Vitek, Philos. Trans. R. Soc. London, Ser. A 309, 1 (1983).
14. J. Tersoff, Phys. Rev. B 38, 9902 (1988).
15. P. Hohenberg and W. Kohn, Phys. Rev. 136, 864 (1964).
16. W. Kohn and L. J. Sham, Phys. Rev. 140, 1135 (1965).
17. D. M. Ceperley and B. J. Alder, Phys. Rev. Lett. 45, 566 (1980).
18. J. P. Perdew and A. Zunger, Phys. Rev. B 23, 5048 (1981).
19. R. Stumpf, X. Gonze, and M. Scheffler (unpublished).
20. L. Kleinman and D. M. Bylander, Phys. Rev. Lett. 48, 1425 (1982).
21. S. L. Cunningham, Phys. Rev. B 10, 4988 (1974).
22. B. C. Pan, C. Z. Wang, and K. M. Ho (unpublished).
23. C. H. Xu, C. Z. Wang, C. T. Chan, and K. M. Ho, J. Phys. C 4, 6047 (1992).
24. S. Y. Qiu, C. Z. Wang, K. M. Ho, and C. T. Chan, J. Phys. C 6, 2947 (1994).
25. H. J. Queisser and J. H. Werner, in Polysilicon Films and Interfaces, edited by C. Y. Wong, C. V. Thompson, and K. N. Tu, MRS Symposia Proceedings No. 106 (Materials Research Society, Pittsburgh, 1988), p. 53.
26. D. P. DiVincenzo, O. L. Alerhand, M. Schlüter, and J. W. Wilkins, Phys. Rev. Lett. 56, 1925 (1986).
27. N. Takeuchi, A. Selloni, A. Shkrebt, and E. Tosatti, Phys. Rev. B44, 13 611 (1991).
28. Phys. Rev. BR. D. Meade and D. Vanderbilt, 40, 3905 (1989).