Optimization of the design of a crucible for a SiC sublimation growth system using a global model

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 1810-1814

  Chen, X J ^a   Liu, L J ^a   Tezuka, H ^b   Usuki, Y ^b   Kakimoto, K ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b FURUKAWA CO LTD   (Japan)

Author keywords

A1. Computer simulation; A1. Heat transfer; A1. Substrates; A2. Growth from vapor

Indexed keywords

COMPUTER SIMULATION; GROWTH RATE; HEAT TRANSFER; MATHEMATICAL MODELS; OPTIMIZATION; SILICON CARBIDE;

CRYSTAL QUALITY; GROWTH FROM VAPOR; POWDER FREE SURFACES; SUBLIMATION GROWTH SYSTEMS;

CRYSTAL GROWTH;

EID: 41449117934     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.016     Document Type: Article

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