Flux-controlled sublimation growth by an inner guide-tube

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 83-86

  Kitou, Yasuo ^a,b   Bahng, Wook ^a,b   Kato, Tomohisa ^a,c   Nishizawa, Shin Ichi ^a,c   Arai, Kazuo ^a,c  

^a Ultra Low Loss Power Device Technology Research Body UPR   (Japan)

^b R&D Association for Future Electron Devices   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Macrodefects; Physical vapor transport; Polycrystal; SiC bulk growth; Strain; X ray topography

Indexed keywords

CRYSTAL GROWTH; POLYCRYSTALS; SINGLE CRYSTALS; SUBLIMATION; TOPOGRAPHY; X RAYS; GEOMETRY; SILICON CARBIDE; STRAIN;

BULK GROWTH; CRYSTAL QUALITY; MACRODEFECTS; PHYSICAL VAPOR TRANSPORT; X-RAY TOPOGRAPHY; CRYSTAL QUALITIES; FLUX-CONTROLLED; INNER STRUCTURE; SUBLIMATION GROWTH;

SILICON CARBIDE; GROWTH RATE;

EID: 4243862184     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.83     Document Type: Article

References (6)

1. Yu.M. Tairov and V.F. Tsvetkov, J. Crystal Growth 52 (1981) 146.
2. W. Bahng, Y. Kitou, S. Nishizawa, H. Yamaguchi, M. Nasir Khan, N. Oyanagi, S. Nishino and K. Arai, J. Crystal Growth 209 (2000) 767.
3. R. A. Stein, Physica 185b (1993) 211.
4. S. Nishizawa, T. Kato, Y. Kitou, N. Oyanagi and K. Arai, in this conference.
5. E. K. Sanchez, V. D. Heydemann, D. W. Snyder, G. S. Rohrer and M. Skowronski, Materials Science Forum 338-342 (2000) 55.
6. A.S. Bakin, S.I. Dorozhkin, A.O. Lebedev, B.A. Kirillov, A.A. Ivanov and Yu.M. Tairov, J. Crystal Growth 198/199 (1999) 1015.